February 24, 2011

Cree Launches Industry’s First Surface-Mount 1200-V Silicon Carbide Schottky Diode

Surface-mount TO-252 D-Pak device can enable smaller, lower-cost, and more-efficient solar-power micro-inverters
DURHAM, N.C. -- Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, announces the availability of the industry’s first commercial 1200-V surface-mount SiC Schottky diode. Packaged in an industry-standard surface-mount TO-252 D-Pak, the Schottky diodes deliver the same proven performance as Cree’s TO-220 through-hole devices, with a smaller board footprint and lower profile. This can enable the design of smaller, lower-cost and more-efficient solar-power micro-inverters, compared to systems designed with larger and bulkier through-hole parts.

“Our customers designing high-efficiency micro-inverters for solar power applications wanted to simplify their designs without compromising system efficiency. They were looking for a surface-mount device that could deliver the same performance they had come to expect from SiC Schottky diodes – zero reverse-recovery losses, high-frequency operation with a low EMI signature, and reduced operating temperatures,” explained Cengiz Balkas, Cree vice president and general manager, Power and RF. “Given Cree’s experience in developing high-voltage SiC power devices, the move to the surface-mount D-Pak was a natural extension of our Schottky diode product line to serve this critical market.”

“Design trends in solar-power micro-inverters are requiring the use of surface-mount components with smaller footprints and lower profiles,” said Alessandro Di Nicco, design engineer new platforms, Power-One. “This enables us to both reduce the size of the inverter circuitry and lower the cost, while maintaining reliability and high efficiency, with the eventual goal of physically integrating the micro-inverter into the solar panels themselves. Cree’s new surface-mount Schottky diodes represent a significant step in that development.”

Cree C2D05120E Schottky diodes are rated for 5 A and 1200 V, with approximate board-mounted dimensions of 6.6-mm wide x 9.9-mm long x 2.3-mm high. Operating junction and storage temperature is rated for -55°C to +175°C.

The C2D05120E surface-mount Schottky diodes are fully qualified and released for production use. For samples and more information about Cree’s SiC power devices, please visit www.cree.com/power.

About Cree
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.

Cree’s product families include power-switching devices, radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting and electronic signs and signals.

For additional product and company information, please refer to www.cree.com

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk that we may be unable to manufacture these products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; customer acceptance of the new products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 27, 2010, and subsequent filings.