Licensing Cree's GaN Power Device Patents

Cree’s GaN power technology is available for licensing. A list of patents that may contain claims that are included in the program are listed below; corresponding foreign counterparts are also included. Contact Cree at licensing@cree.com for further information.

US Patent Number
Issue Date
Full Title
6,316,793 13 Nov 2001 Nitride based transistors on semi-insulating silicon carbide substrates
6,475,889 05 Nov 2002 Method of forming vias in silicon carbide and resulting devices and circuits
6,486,502 26 Nov 2002 Nitride based transistors on semi-insulating silicon carbide substrates
6,515,303 04 Feb 2003 Method of forming vias in silicon carbide and resulting devices and circuits
6,548,333 15 Apr 2003 Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
6,586,781 01 Jul 2003 Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same 
6,649,497 18 Nov 2003 Method of forming vias in silicon carbide and resulting devices and circuits
6,727,531 27 Apr 2004 Indium gallium nitride channel high electron mobility transistors, and method of making the same 
6,777,278 17 Aug 2004 Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
6,849,882 01 Feb 2005 Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
6,946,739 20 Sep 2005 Method of forming vias in silicon carbide and resulting devices and circuits
6,982,204 03 Jan 2006 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
7,030,428 18 Apr 2006 Strain balanced nitride heterojunction transistors
7,045,404 16 May 2006 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
7,125,786 24 Oct 2006 Method of forming vias in silicon carbide and resulting devices and circuits
7,170,111 30 Jan 2007 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
7,230,284 12 Jun 2007 Insulating gate AlGaN/GaN HEMT
7,238,560 03 Jul 2007 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
7,253,454 07 Aug 2007 High electron mobility transistor 
7,265,399 04 Sep 2007 Asymetric layout structures for transistors and methods of fabricating the same
7,326,971 05 Feb 2008 Gallium nitride based high-electron mobility devices
7,332,795 19 Feb 2008 Dielectric passivation for semiconductor devices
7,364,988 29 Apr 2008 Method of manufacturing gallium nitride based high-electron mobility devices 
7,419,892 02 Sep 2008 Semiconductor devices including implanted regions and protective layers and methods of forming the same
7,432,142 07 Oct 2008 Methods of fabricating nitride-based transistors having regrown ohmic contact regions 
7,456,443 25 Nov 2008 Transistors having buried n-type and p-type regions beneath the source region
7,465,967 16 Dec 2008 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
7,501,669 10 Mar 2009 Wide bandgap transistor devices with field plates
7,544,963 09 Jun 2009 Binary group III-nitride based high electron mobility transistors
7,550,783 23 Jun 2009 Wide bandgap HEMTs with source connected field plates 
7,550,784 23 Jun 2009 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
7,573,078 11 Aug 2009 Wide bandgap transistors with multiple field plates
7,592,211 22 Sep 2009 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 
7,612,390 03 Nov 2009 Heterojunction transistors including energy barriers
7,615,774 10 Nov 2009 Aluminum free group III-nitride based high electron mobility transistors
7,638,818 28 Dec 2009 Robust transistors with fluorine treatment 
7,678,628 16 Mar 2010 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
7,692,263 06 Apr 2010 High voltage GaN transistors
7,709,269 04 May 2010 Transistors including supported gate electrodes 
7,709,859 04 May 2010 Cap layers including aluminum nitride for nitride-based transistors
7,745,851 29 Jun 2010 Polytype hetero-interface high electron mobility device and method of making
7,812,369 12 Oct 2010 Fabrication of single or multiple gate field plates
7,855,401 21 Dec 2010 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
7,875,537 25 Jan 2011 High temperature ion implantation of nitride based HEMTs
7,892,974 22 Feb 2011 Method of forming vias in silicon carbide and resulting devices and circuits
7,893,500 22 Feb 2011 High voltage GaN transistors
7,901,994 08 Mar 2011 Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
7,906,799 15 Mar 2011 Nitride-based transistors with a protective layer and a low-damage recess
7,915,644 29 Mar 2011 Wide bandgap HEMTs with source connected field plates
7,919,791 05 Apr 2011 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
7,928,475 19 Apr 2011 Wide bandgap transistor devices with field plates
7,955,918 07 Jun 2011 Robust transistors with fluorine treatment 
7,960,756 14 Jun 2011 Methods of fabricating transistors including dielectrically-supported gate electrodes
7,985,986 26 Jul 2011 Normally-off semiconductor devices
8,049,252 01 Nov 2011 Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
8,049,252 01 Nov 2011 Methods of fabricating transistors including dielectrically supported gate electrodes and related devices
8,105,889 31 Jan 2012 Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
8,120,064 21 Feb 2012 Wide bandgap transistor devices with filed plates
8,153,515 10 Apr 2012 Methods of fabricating strain balanced nitride heterojunction transistors
8,169,005 01 May 2012 High voltage GaN transistors
8,174,089 08 May 2012 High voltage switching devices and process for forming same
8,198,178 12 Jun 2012 Methods of fabrication normally-off semiconductor devices
8,202,796 19 Jun 2012 Method of forming vias in silicon carbide and resulting devices and circuits
8,203,185 19 Jun 2012 Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
8,212,289 03 Jul 2012 Group III nitride field effect transistors (FETs) capable of withstanding high temperature reverse bias test conditions
8,212,290 03 Jul 2012 High temperature performance capable GaN transistor
8,216,924 10 Jul 2012 Methods of fabricating transistors using laser annealing of source/drain regions
8,274,159 25 Sep 2012 Group III nitride based flip chip integrated circuit and method for fabricating
8,283,699 09 Oct 2012 GaN based HEMTs with buried field plates
8,330,244 11 Dec 2012 Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
8,344,398 01 Jan 2013 Low voltage diodes with reduced parasitic resistance and method for fabricating
8,357,571 22 Jan 2013 Methods of forming semiconductor contacts and related semiconductor devices
8,357,996 22 Jan 2013 Devices with crack stops
8,390,101 05 Mar 2013 High voltage switching devices and process for forming same
8,421,122 16 Apr 2013 High power gallium nitride field effect transistor switches
8,432,012 30 Apr 2013 Semiconductor devices including Schottky diodes having overlapping doped regions and methods of fabricating same